79 GHz fully integrated fully differential Si/SiGe HBT amplifier for automotive radar applications

A fully integrated 2.45 GHz 0.25μm CMOS power amplifier

A fully integrated differential class-AB power amplifier has been designed in a 0.25um CMOS technology. It is intended for medium output power ranges such as Bluetooth class I, and has an operating frequency of 2.45GHz. By using two parallel output stages that can he switched on or off, a high efficiency can be achieved for both high and low output power levels. The simulated maximum output pow...

Fully Integrated CMOS Power Amplifier

Very low-voltage fully differential amplifier for switched-capacitor applications

A fully differential opamp suitable for very-low voltage switched-capacitor circuits in standard CMOS technologies is introduced. The proposed two stage opamp needs a simple low voltage CMFB switched-capacitor circuit only for the second stage. Due to the reduced supply voltage, the CMFB circuit is implemented using bootstrapped switches. Minor modifications allow to use chopper stabilization f...

Fully differential cryogenic transistor amplifier

We have constructed a dc-coupled differential amplifier capable of operating in the 4.2 K – 300 K temperature range. The amplifier can be operated at high-bias setting, where it dissipates 5 mW, has noise temperature TN < 0.8 K at 4 k source resistance and >40 MHz bandwidth at 4.2 K bath temperature. The bias setting can be adjusted: at our lowest tested setting the amplifier dissipates <100 W,...

A Fully Integrated 5.2 GHz Do Rejection Gilbert Downconver HBT Techno

Abstract — A 5.2 GHz 1 dB conversion gain, IP1dB= -19 dBm and IIP3= -9 dBm double quadrature Gilbert downconversion mixer with polyphase filters is demonstrated by using 0.35 m SiGe HBT technology. The image rejection ratio is better than 47 dB when LO=5.17 GHz and IF is in the range of 15 MHz to 45 MHz. The Gilbert downconverter has fourstage RC-CR IF polyphase filters for image rejection. Pol...